BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 • Pb-free (RoHS compliant) package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS17W MCs 1 = B 2 = E 3 = C SOT323 Maximum Ratings at T = 25 °C, unless otherwise specified A Parameter Symbol Value Unit Collector-emitter voltage V 15 V CEO Collector-base voltage V 25 CBO Emitter-base voltage V 2.5 EBO Collector current I 25 mA C Peak collector current, f = 10 MHz I 50 CM Total power dissipation1) P 280 mW tot T ≤ 93 °C S Junction temperature T 150 °C J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) R ≤ 205 K/W thJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-07-20

BFS17W Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 15 - - V (BR)CEO I = 1 mA, I = 0 C B Collector-base cutoff current I µA CBO V = 10 V, I = 0 - - 0.05 CB E V = 25 V, I = 0 - - 10 CB E Emitter-base cutoff current I - - 100 EBO V = 2.5 V, I = 0 EB C DC current gain h - FE I = 2 mA, V = 1 V, pulse measured 40 - 150 C CE I = 25 mA, V = 1 V, pulse measured 20 70 - C CE Collector-emitter saturation voltage V - 0.1 0.4 V CEsat I = 10 mA, I = 1 mA C B 2 2011-07-20

BFS17W Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f GHz T I = 2 mA, V = 5 V, f = 200 MHz 1 1.4 - C CE I = 25 mA, V = 5 V, f = 200 MHz 1.3 2.5 - C CE Collector-base capacitance C - 0.55 0.8 pF cb V = 5 V, f = 1 MHz, V = 0 , CB BE emitter grounded Collector emitter capacitance C - 0.3 - ce V = 5 V, f = 1 MHz, V = 0 , CE BE base grounded Emitter-base capacitance C - 0.9 1.45 eb V = 0.5 V, f = 1 MHz, V = 0 , EB CB collector grounded Minimum noise figure NF - 3.5 5 dB min I = 2 mA, V = 5 V, Z = 50 Ω, C CE S f = 800 MHz Transducer gain |S |2 - 14 - dB 21e I = 20 mA, V = 5 V, Z = Z = 50Ω, C CE S L f = 500 MHz Third order intercept point at output IP - 22.5 - dBm 3 V = 5 V, I = 20 mA, f = 800 MHz, CE C Z = Z , Z = Z S Sopt L Lopt 1dB compression point P - 11 - - -1dB I = 20 mA, V = 5 V, Z = Z = 50Ω, C CE S L f = 800 MHz 3 2011-07-20

BFS17W Total power dissipation P = ƒ(T ) Permissible Pulse Load R = ƒ(t ) tot S thJS p 320 10 3 mW K/W 240 ot hJS 10 2 Pt 200 Rt 160 0.5 0.2 120 0.1 10 1 0.05 0.02 80 0.01 0.005 D = 0 40 00 15 30 45 60 75 90 105 120 °C 150 10 01 0 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 T t S p Permissible Pulse Load Collector-base capacitance Ccb = ƒ(VCB) Ptotmax/PtotDC = ƒ(tp) Emitter-base capacitance Ceb = ƒ(VEB) f = 1 MHz 10 3 1.2 pF - C D 1 ot Pt B /ax D = 0 CE 0.9 otm 10 2 0.005 , CB 0.8 Pt 0.01 C 0.02 0.7 CEB 0.05 0.1 0.6 0.2 0.5 CCB 0.5 10 1 0.4 0.3 0.2 0.1 10 01 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 00 2 4 6 8 10 12 14 16 V 20 tp VCB, VEB 4 2011-07-20

BFS17W Transition frequency f = ƒ(I ) T C V = parameter CE 3 10V GHz 5V 3V 2 T f 2V 1.5 1 1V 0.5 0.7V 0 0 5 10 15 20 mA 30 I C 5 2011-07-20

Package SOT323 BFS17W Package Outline 2±0.2 0.9±0.1 0.1 MAX. 0.3+0.1 3x -0.05 0.1M 0.1 A 3 2.1±0.1 MIN. 1.25±0.1 1 1 2 0. 0.65 0.65 0.15+-00..015 0.2M A Foot Print 0.6 6 1. 8 0. 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 3 2. Pin 1 2.15 1.1 6 2011-07-20

BFS17W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-07-20

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